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| MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. 1 Unit:mm GND 8 FEATURES * Low voltage * High gain * High efficiency * High power 3.5V 22.5B 50% 30.5dBm 2 7 3 6 4 5 APPLICATION PDC0.8GHz GND 10.0 0.8 2.0 6.0 1 RF INPUT 2 VD1 3 4 5 6 GND VD2 RF OUTPUT GND 7 GND 8 VG1,2 tolerance:0.2 ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation case temperature Storage temperature Condition Po30.5dBm ZG=ZL=50 Tc 25C 25C - - Ratings 4.5 15 -20 to +85 -30 to +90 Unit V dBm C C Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec ELECTRICAL CHARACTERISTICS(Ta=25C) Symbol Parameter Test conditions Min 925 - - - - - - - Limits Typ - 5 640 - - - - - Max 958 8 720 -6 -47 -62 -30 -30 Unit MHz dBm mA dB dBc dBc dBc dBc f Frequency Input power Pin IDt Total drain current Return loss in 50kHz adjacent channel power ACP50 ACP100 100kHz adjacent channel power 2nd harmonics 2fo 3rd harmonics 3fo Po=30.5dBm VD1=VD2=3.5V VG1,2=-2.5V ZG=ZL=50 (/4DQPSK) Ditto (CW) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC TYPICAL CHARACTERISTICS 1 Frequency (MHz) 925.0 941.5 958.0 Pin (dBm) 5.78 6.05 6.52 Po (dBm) 30.5 30.5 30.5 Id1 (mA) 93 90 91 Id2 (mA) 552 547 543 Idt (mA) 644 637 634 Ig1,2 (mA) -1.86 -1.86 -1.86 -50k (dBc) -49.9 -51.7 -51.6 +50k (dBc) -49.2 -51.2 -51.6 -100k (dBc) -62.5 -63.6 -64.4 VD1=3.5V,VD2=3.5V,VG=-2.5V +100k 2SP 3SP RL (dBc) (dBc) (dBc) (dB) -62.6 -37.5 -49.2 -10.7 -64.1 -37.4 -49.7 -9.4 -64.6 -37.2 -50.2 -8.5 PO,ACP vs Pin CHARACTERISTICS 35 -30 f=925MHz VD1=3.5V VD2=3.5V VG=-2.5V 35 PO,IDs vs Pin CHARACTERSTICS 1000 900 -40 30 PO 800 700 -50 25 IDt ID2 600 500 400 300 30 PO ACP+50k ACP-50k 25 20 -60 ACP+100k ACP-100k -70 20 15 15 ID1 200 100 0 10 10 -5.0 0.0 5.0 -80 10.0 10 -5 0 5 Pin(dBm) Pin(dBm) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC TYPICAL CHARACTERISTICS 2 ACP vs f CHARACTERISTICS -40 VD1=3.5V VD2=3.5V VG=-2.5V PO=30.5dBm SET -50k +50k -55 ID vs f CHARACTERISTICS 800 750 700 650 600 550 500 450 VD1=3.5V VD2=3.5V 400 VG=-2.5V 350 PO=30.5dBm SET 300 250 200 150 1D1 100 50 0 908.5 925 941.5 IDt -45 -50 1D2 -60 +100k -65 908.5 -100k 925 941.5 958 974.5 958 974.5 f(MHz) f(MHz) Pin, R.L vs f CHARACTERISTICS 8.0 7.0 Pin 6.0 5.0 4.0 3.0 2.0 1.0 0.0 908.5 925 VD1=3.5V VD2=3.5V VG=-2.5V PO=30.5dBm SET 941.5 958 R.L. -6.0 -8.0 -10.0 -12.0 -14.0 -16.0 -18.0 974.5 -2.0 -4.0 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 ID vs VD CHARACTERISTICS IDt ID2 f=925MHz VG=-2.5V PO=30.5dBm SET ID1 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 f(MHz) VD(V) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC EQUIVALENT CIRCUIT 1ST GATE 2ND GATE 1ST DRAIN 2ND DRAIN RF INPUT MATCHING CIRCUIT MATCHING CIRCUIT MATCHING CIRCUIT RF OUTPUT GND Nov. 97 |
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